B2-224-TPL COMMUNICATIONS-Silicon RF Power MOSFET Power Transistor, 175 MHz, 530 MHz, 70W

Descripción

DESCRIPTION
RD70HUF2 is MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

FEATURES
1. Supply with Tape and Reel. 500 Units per Reel 2. Employing Mold Package
3. High Power and High Efficiency
Pout=75Wtyp, Drain Effi.=64%typ 
@ Vds=12.5V Idq=1.0A Pin=5.5W   f=530MHz
Pout=84Wtyp, Drain Effi.=74%typ
@ Vds=12.5V Idq=1.0A Pin=4.0W  f=175MHz
4. Integrated gate protection diode

APPLICATION
For output stage of high power amplifiers in VHF/UHF band mobile radio sets.

RoHS COMPLIANT
RD70HUF2 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1. Lead in high melting temperature type solders. (i.e. tin-lead solder alloys containing more than85% lead.)

Información adicional